A 1.1 µA voltage reference circuit with high PSRR and temperature compensation

Pereira, M. Silva; Costa, João E. N.; Santos, M.; Vaz, J. Caldinhas

http://hdl.handle.net/10400.26/53475

Use this identifier to reference this record.

Name:	Description:	Size:	Format:
A_1.1_A_voltage_reference_circuit_with_high_PSRR_and_temperature_compensation.pdf		7.02 MB	Adobe PDF	Download

Send Feedback

Authors

Abstract(s)

This paper presents a low-power and a low output voltage CMOS Bandgap Reference Generator topology with high PSRR and a novel temperature curvature compensation method. The proposed design was implemented in a standard 0.13 μm CMOS process. The main circuit is based in an opamp based β-multiplier bandgap circuit with resistive division. The compensation method cancels out up to 2nd order non-linear terms of the BJT voltage by using the MOSFET leakage current effect. The performance of the circuit was verified by post-layout simulations. Simulated results have shown temperature coefficients as low as -4.4 ppm/°C over a temperature range of 140°C (-40°C to 100°C). In addition the circuit demonstrated a PSSR of -100 dB at low frequencies and -73 dB at 1 MHz. The current consumption is 1.1 μA at 27°C.

URI

http://hdl.handle.net/10400.26/53475

Citation

M. S. Pereira, J. E. N. Costa, M. Santos and J. C. Vaz, "A 1.1 µA voltage reference circuit with high PSRR and temperature compensation," 2015 Conference on Design of Circuits and Integrated Systems (DCIS), Estoril, Portugal, 2015, pp. 1-4, doi: 10.1109/DCIS.2015.7388564.