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A Single-Ended Modified Class-E PA With HD2 Rejection for Low-Power RF Applications

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Abstract(s)

This letter presents a fully integrated single-ended power amplifier for ultralow-power applications. The single-ended configuration is possible due to a choke-inductor less output network capable of rejecting the second-harmonic emission. A switching duty-ratio lower than 50% avoids the impedance transformation output network traditionally required for proper class-E operation. At 2.45 GHz, the PA (including the driver) delivers 1.4 dBm to a 50 Ω load and achieves an overall efficiency of 51% while complying with the spurious emission regulation. The prototype was fabricated in 0.13 μm CMOS.

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Class-E CMOS power amplifier radiofrequency ultralow-power (ULP)

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Citation

M. Silva-Pereira and J. Caldinhas Vaz, "A Single-Ended Modified Class-E PA With HD2 Rejection for Low-Power RF Applications," in IEEE Solid-State Circuits Letters, vol. 1, no. 1, pp. 22-25, Jan. 2018.

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IEEE

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